The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2018

Filed:

Jul. 27, 2016
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Tongshang Su, Beijing, CN;

Shengping Du, Beijing, CN;

Ning Liu, Beijing, CN;

Dongfang Wang, Beijing, CN;

Guangcai Yuan, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 27/1288 (2013.01); H01L 29/66969 (2013.01);
Abstract

A method for manufacturing a thin-film transistor (TFT), an array substrate and a display device are disclosed. The manufacturing method includes: forming a photoresist layer provided with a completely retained region, a partially-retained region and a completely removed region on a metal film by a half-tone mask process; forming a source/drain metal layer by etching the metal film under the cover of the photoresist layer; removing the photoresist layer in the partially-retained region; forming an active layer by patterning the semiconductor film; and removing residual photoresist layer.


Find Patent Forward Citations

Loading…