The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Mar. 29, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Dong-Won Kim, Hwaseong-si, KR;
Bong-Tae Park, Seoul, KR;
Ho-Jun Seong, Suwon-si, KR;
Jae-Hwang Sim, Hwaseong-si, KR;
Jung-Hoon Jun, Incheon, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 27/1157 (2017.01); H01L 21/28 (2006.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01); H01L 21/265 (2006.01); H01L 21/027 (2006.01); H01L 27/11573 (2017.01); H01L 29/49 (2006.01); H01L 27/11524 (2017.01); H01L 27/11534 (2017.01);
U.S. Cl.
CPC ...
H01L 27/1157 (2013.01); H01L 21/0273 (2013.01); H01L 21/26513 (2013.01); H01L 21/28088 (2013.01); H01L 21/28273 (2013.01); H01L 21/28282 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/32133 (2013.01); H01L 21/823418 (2013.01); H01L 21/823456 (2013.01); H01L 21/823468 (2013.01); H01L 27/11524 (2013.01); H01L 27/11534 (2013.01); H01L 27/11573 (2013.01); H01L 29/4966 (2013.01);
Abstract
A method of forming a nonvolatile memory device includes forming first, second, and third gate structures, with the second and third gate structures including first and second spacer structures formed on a sidewall of the second gate structure and sidewalls of the third gate structure. Impurity regions are formed through ion implantation and the first spacer structure shields the second and third gate structures during ion implantation. The second spacer structure defines resulting impurity regions.