Assist cuts disposed in dummy lines to improve metal signal cuts in active lines of a semiconductor structure

Abstract

A semiconductor structure includes a substrate having a plurality of semiconductor devices disposed therein. A dielectric layer is disposed over the substrate. A plurality of substantially parallel metal lines are disposed in the dielectric layer. The metal lines include active lines for routing signals to and from the devices, and dummy lines which do not route signals to and from the devices. Signal cuts are disposed in the active lines. The signal cuts define tips of the active lines. Assist cuts are disposed exclusively in the dummy lines and do not define tips of the active lines. The assist cuts are located proximate the signal cuts such that a first density of assist cuts and signal cuts in an area surrounding the signal cuts is substantially greater than a second density of signal cuts alone in the same area.