The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2018

Filed:

Jul. 06, 2016
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Balaji Padmanabhan, Tempe, AZ (US);

Prasad Venkatraman, Gilbert, AZ (US);

Ali Salih, Mesa, AZ (US);

Mihir Mudholkar, Tempe, AZ (US);

Chun-Li Liu, Scottsdale, AZ (US);

Jason McDonald, Gilbert, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49575 (2013.01); H01L 23/4951 (2013.01); H01L 23/49524 (2013.01); H01L 23/49534 (2013.01); H01L 23/49558 (2013.01); H01L 23/49562 (2013.01); H01L 24/40 (2013.01); H01L 24/41 (2013.01); H01L 24/45 (2013.01); H01L 2224/40105 (2013.01); H01L 2224/40139 (2013.01); H01L 2224/40245 (2013.01); H01L 2224/41109 (2013.01); H01L 2224/41112 (2013.01); H01L 2224/41174 (2013.01); H01L 2224/48245 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/13064 (2013.01); H01L 2924/13091 (2013.01);
Abstract

In accordance with an embodiment, a semiconductor component includes a support having a first device receiving structure and a second device receiving structure and a contact extension that is common to the first and second device receiving structures. The first device receiving structure includes a device receiving area and the second device receiving structure includes a drain contact area. A III-N based semiconductor chip has a drain bond pad bonded to the drain contact area and a source bond pad bonded to the contact extension and a gate bond pad bonded to an interconnect. A portion of the silicon based semiconductor chip is bonded to the support device receiving area. In accordance with another embodiment, a method for manufacturing the semiconductor component includes coupling a III-N based semiconductor chip to a portion of the support a silicon based semiconductor chip to another portion of the support.


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