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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9905482 B1

PDFFull Text
Date of Patent:
Feb. 27, 2018

Filed:

Aug. 09, 2017

Method of manufacturing a semiconductor device and inspecting an electrical characteristic thereof using test socket terminals

Applicant:

Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;

Inventors:

Toshitsugu Ishii, Ibaraki, JP;

Naohiro Makihira, Tokyo, JP;

Hidekazu Iwasaki, Tokyo, JP;

Jun Matsuhashi, Tokyo, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Tokyo, JP;

Attorney:

Shapiro, Gabor and Rosenberger, PLLC

Primary Examiner:

Benjamin Sandvik

Assistant Examiner:

Farid Khan

Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 25/00 (2006.01); G01R 1/067 (2006.01); G01R 31/40 (2014.01); H01L 23/00 (2006.01); G01R 1/04 (2006.01); G01R 31/28 (2006.01);
U.S. Cl.
CPC ...
H01L 22/14 (2013.01); G01R 1/06738 (2013.01); G01R 31/40 (2013.01); H01L 24/36 (2013.01); H01L 24/40 (2013.01); H01L 24/97 (2013.01); H01L 25/50 (2013.01); G01R 1/0466 (2013.01); G01R 1/0483 (2013.01); G01R 31/2874 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/40095 (2013.01); H01L 2224/40245 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73221 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/97 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01);
Abstract

Improvement in yield of a semiconductor device is obtained. In addition, increase in service life of a socket terminal is obtained. A projecting portion PJand a projecting portion PJare provided in an end portion PU of a socket terminal STE. Thus, it is possible to enable contact between a lead and the socket terminal STE in which a large current is caused to flow, at two points by a contact using the projecting portion PJand by a contact using the projecting portion PJ, for example. As a result, the current flowing from the socket terminal STEto the lead flows by being dispersed into a path flowing in the projecting portion PJand a path flowing in the projecting portion PJ. Accordingly, it is possible to suppress increase of temperature of a contact portion between the socket terminal STEand the lead even in a case where the large current is caused to flow between the socket terminal STEand the lead.

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