The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Jan. 31, 2017
Nuvoton Technology Corporation, Hsinchu Science Park, TW;
Wen-Ying Wen, Hsinchu County, TW;
NUVOTON TECHNOLOGY CORPORATION, Hsinchu Science Park, TW;
Abstract
A method includes forming a first nitride layer on a semiconductor substrate, forming a first oxide layer on the first nitride layer, forming a first trench through the first oxide layer, the first nitride layer and a portion of the semiconductor substrate, forming a first spacer on a sidewall of the first trench, forming a second trench in the semiconductor substrate by using the first spacer as a mask, forming a third trench, forming a second oxide layer in the second trench, wherein the second oxide layer laterally extends into the semiconductor substrate and under the first spacer, forming a second spacer on a sidewall of the third trench, and removing a portion of the first nitride layer and a portion of the semiconductor substrate by etching and using the second spacer as a mask to form a fin structure on the second oxide layer.