The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Oct. 21, 2015
Applicant:
Imec Vzw, Leuven, BE;
Inventors:
Boon Teik Chan, Leuven, BE;
Safak Sayan, Leuven, BE;
Assignee:
IMEC VZW, Leuven, BE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 21/768 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76816 (2013.01); H01L 21/31051 (2013.01); H01L 21/31144 (2013.01); H01L 21/76807 (2013.01);
Abstract
A method for forming contact vias includes providing a substrate comprising a plurality of contact structures embedded in a first dielectric layer, the contacts abutting an upper surface of the first dielectric layer. The method also includes providing a second dielectric layer on the upper surface of the first dielectric layer, and providing contact vias in the second dielectric layer by patterning the second dielectric layer at least at positions corresponding to the contact structures, wherein patterning the second dielectric layer comprises using a DSA patterning technique.