The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Mar. 03, 2016
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Takaki Niwa, Kiyosu, JP;
Tohru Oka, Kiyosu, JP;
Masayoshi Kosaki, Kiyosu, JP;
Takahiro Fujii, Kiyosu, JP;
Yukihisa Ueno, Kiyosu, JP;
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
The method for manufacturing comprises an ion implantation process of implanting a p-type impurity into a semiconductor layer mainly made of a group III nitride by ion implantation; a first heating process of heating the semiconductor layer at a first temperature in a first atmospheric gas including ammonia (NH) after the ion implantation process; and a second heating process of heating the semiconductor layer, after the first heating process, at a second temperature that is lower than the first temperature in a second atmospheric gas including oxygen (O).