The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2018

Filed:

Apr. 24, 2014
Applicant:

Halliburton Energy Services, Inc., Houston, TX (US);

Inventors:

James M. Price, The Woodlands, TX (US);

Aditya B. Nayak, Humble, TX (US);

David L. Perkins, The Woodlands, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/48 (2006.01); H01L 21/265 (2006.01); C23C 14/22 (2006.01); G01B 11/06 (2006.01); G02B 5/28 (2006.01); H01L 21/67 (2006.01); C23C 14/00 (2006.01); C23C 14/06 (2006.01); C23C 14/16 (2006.01); C23C 14/18 (2006.01); H01J 37/317 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/265 (2013.01); C23C 14/0042 (2013.01); C23C 14/0641 (2013.01); C23C 14/16 (2013.01); C23C 14/18 (2013.01); C23C 14/221 (2013.01); C23C 14/48 (2013.01); G01B 11/0625 (2013.01); G01B 11/0683 (2013.01); G02B 5/285 (2013.01); H01J 37/3171 (2013.01); H01L 21/67213 (2013.01); H01L 21/67253 (2013.01); H01L 22/34 (2013.01);
Abstract

Systems and methods of engineering the optical properties of an optical Integrated Computational Element device using ion implantation during fabrication are provided. A system as disclosed herein includes a chamber, a material source contained within the chamber, an ion source configured to provide a high-energy ion beam, a substrate holder to support a multilayer stack of materials that form the Integrated Computational Element device, a measurement system, and a computational unit. The material source provides a material layer to the multilayer stack, and at least a portion of the ion beam is deposited in the material layer according to an optical value provided by the measurement system.


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