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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9905414 B1

PDFFull Text
Date of Patent:
Feb. 27, 2018

Filed:

May. 23, 2016

Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide

Applicant:

President and Fellows of Harvard College, Cambridge, MA (US);

Inventors:

Roy Gerald Gordon, Cambridge, MA (US);

Jill S. Becker, Cambridge, MA (US);

Dennis Hausmann, Los Gatos, CA (US);

Seigi Suh, Cary, NC (US);

Assignee:

President and Fellows of Harvard College, Cambridge, MA (US);

Attorney:

Clark & Elbing LLP

Primary Examiner:

Michael Wieczorek

Assistant Examiner:

Michael G Miller

Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23C 16/06 (2006.01); H01L 21/02 (2006.01); C07F 9/09 (2006.01); C07F 9/11 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01L 21/314 (2006.01); C01B 13/34 (2006.01); C01B 25/30 (2006.01); C01B 25/36 (2006.01); C01B 33/12 (2006.01); C01B 33/20 (2006.01); C01B 33/26 (2006.01); C01G 25/02 (2006.01); C01G 27/02 (2006.01); C01G 35/00 (2006.01); C23C 16/30 (2006.01); H01L 49/02 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 21/316 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02148 (2013.01); C01B 13/34 (2013.01); C01B 25/30 (2013.01); C01B 25/36 (2013.01); C01B 33/126 (2013.01); C01B 33/20 (2013.01); C01B 33/26 (2013.01); C01G 25/02 (2013.01); C01G 27/02 (2013.01); C01G 35/00 (2013.01); C07F 9/091 (2013.01); C07F 9/11 (2013.01); C23C 16/30 (2013.01); C23C 16/40 (2013.01); C23C 16/401 (2013.01); C23C 16/402 (2013.01); C23C 16/405 (2013.01); C23C 16/455 (2013.01); C23C 16/45525 (2013.01); C23C 16/45531 (2013.01); C23C 16/45553 (2013.01); H01L 21/02159 (2013.01); H01L 21/02205 (2013.01); H01L 21/02271 (2013.01); H01L 21/3141 (2013.01); H01L 28/40 (2013.01); H01L 29/0684 (2013.01); H01L 29/42364 (2013.01); H01L 29/517 (2013.01); H01L 21/31612 (2013.01);
Abstract

Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido) hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

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