The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2018

Filed:

Aug. 26, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Youngjin Cho, Seoul, KR;

Jaegeun Park, Suwon-si, KR;

Youngkwang Yoo, Yongin-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G06F 9/00 (2006.01); G11C 11/4074 (2006.01); G11C 11/406 (2006.01); G06F 1/32 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4074 (2013.01); G06F 1/3287 (2013.01); G11C 11/40615 (2013.01); G11C 11/40626 (2013.01); G11C 2211/4067 (2013.01);
Abstract

A dynamic random access memory (DRAM) device includes a memory cell array including a plurality of memory cells, a refresh controller configured to perform a plurality of refresh operations on the plurality of memory cells in response to a plurality of refresh commands from an external device, and a refresh counter configured to count a number of the refresh commands for a fixed period of time and compare the counted number with a threshold. The refresh counter is configured to generate a power failure signal to cause the DRAM device to enter a power failure mode in response to the comparison of the counted number with the threshold. The refresh controller is configured to perform a refresh operation on the plurality of memory cells without control of the external device in the power failure mode.


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