The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Nov. 07, 2014
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Massachusetts Institute of Technology, Cambridge, MA (US);
Lincoln J Miara, Cambridge, MA (US);
William Richards, Cambridge, MA (US);
Shyue Ping Ong, San Diego, CA (US);
Yifei Mo, Greenbelt, MD (US);
Gerbrand Ceder, Wellesley, CA (US);
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-do, KR;
Abstract
Non-normal statistics applied to diffusivity calculations accelerate screening of ionic conductors for electrochemical devices such as electric storage batteries, fuel cells, and sensors. Displacements of atomic species within a crystalline structure for a candidate ionic conductor material are analyzed using a Skellam distribution optionally combined with Gaussian noise to calculate values for the standard deviation, upper error bound, and lower error bound for predicted values of diffusivity (D). When the predicted values of D have sufficient statistical precision, the diffusivity calculation is terminated and the calculated diffusivity is compared to a threshold value of diffusivity. When the threshold has been exceeded, the candidate ionic conductor may be listed as a preferred good conductor. When the calculated diffusivity fails to exceed the threshold, the material may be listed as a poor conductor and may be eliminated from further consideration.