The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Sep. 24, 2013
Applicant:
Josho Gakuen Educational Foundation, Osaka-shi, Osaka, JP;
Inventors:
Toshio Haga, Osaka, JP;
Hiroshi Fuse, Osaka, JP;
Assignee:
JOSHO GAKUEN EDUCATIONAL FOUNDATION, Osaka-Shi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C22C 21/02 (2006.01); B22D 17/30 (2006.01); B22D 21/04 (2006.01); B22D 17/10 (2006.01); C22C 21/04 (2006.01); B22D 21/00 (2006.01);
U.S. Cl.
CPC ...
C22C 21/02 (2013.01); B22D 17/10 (2013.01); B22D 17/30 (2013.01); B22D 21/007 (2013.01); B22D 21/04 (2013.01); C22C 21/04 (2013.01); Y10T 428/12 (2015.01);
Abstract
The present invention provides a hypereutectic aluminum-silicon alloy die-cast member which contains 20.0% by mass to 30.0% by mass of silicon and also has a thickness of 2.5 mm or less, and a method for producing the same. Disclosed is a die-cast member made of a hypereutectic aluminum-silicon alloy containing 20.0% by mass to 30.0% by mass of silicon, wherein the die-cast member has a thickness of 2.5 mm or less and an average size of primary crystal Si is 0.04 mm to 0.20 mm.