The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Nov. 11, 2016
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
St Microelectronics SA, Montrouge, FR;
St Microelectronics (Crolles 2) Sas, Crolles, FR;
Thomas Ferrotti, Entre-Deux-Eaux, FR;
Badhise Ben Bakir, Brezins, FR;
Alain Chantre, Seyssins, FR;
Sebastien Cremer, Grenoble, FR;
Helene Duprez, Seyssinet-Pariset, FR;
Commissariat A L'Energie Atomique et aux Energies Alternatives, Paris, FR;
ST Microelectronics SA, Montrouge, FR;
ST Microelectronics (Crolles 2) SAS, Crolles, FR;
Abstract
A III-V heterostructure laser device located in and/or on silicon, including a III-V heterostructure gain medium, a rib optical waveguide, located facing the gain medium and including a strip waveguide equipped with a longitudinal rib, the rib optical waveguide being located in the silicon, two sets (RBE-A, RBE-B) of Bragg gratings formed in the rib optical waveguide and located on either side of the III-V heterostructure gain medium, each set (RBE-A, RBE-B) of Bragg gratings including a first Bragg grating (RB1-A, RB1B) having a first pitch and formed in the rib and a second Bragg grating (RB2-A, RB2-B) having a second pitch different from the first pitch and formed on that side of the rib waveguide which is opposite the rib.