The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Jun. 01, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Ki-Woong Kim, Hwaseong-si, KR;
Ju-Hyun Kim, Hwaseong-si, KR;
Yong-Sung Park, Suwon-si, KR;
Se-Chung Oh, Yongin-si, KR;
Joon-Myoung Lee, Anyang-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-do, KR;
Abstract
A magnetic memory device includes a substrate, a circuit device on the substrate, a lower electrode electrically connected to the circuit device, a magnetic tunnel junction structure (MTJ structure) on the lower electrode, and an upper electrode on the MTJ structure. The MTJ structure includes a pinned layer structure including at least one crystalline ferromagnetic layer and at least one amorphous ferromagnetic layer, a free layer, and a tunnel barrier layer between the pinned layer structure and the free layer.