The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Jun. 16, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Young Jo Tak, Hwaseong-si, KR;
Sam Mook Kang, Hwaseong-si, KR;
Mi Hyun Kim, Seoul, KR;
Jun Youn Kim, Hwaseong-si, KR;
Young Soo Park, Yongin-si, KR;
Misaichi Takeuchi, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
A method of manufacturing a semiconductor substrate may include forming a first semiconductor layer on a growth substrate, forming a second semiconductor layer on the first semiconductor layer, forming a plurality of voids in the first semiconductor layer by removing portions of the first semiconductor layer that are exposed by a plurality of trenches in the second semiconductor layer, forming a third semiconductor layer on the second semiconductor layer and covering the plurality of trenches, and separating the second and third semiconductor layers from the growth substrate. on the first semiconductor layer. The third semiconductor layer are grown from the second semiconductor layer and extend above the second semiconductor layer.