The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2018

Filed:

Feb. 17, 2016
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Anna Muscara', Patti, IT;

Massimo Cataldo Mazzillo, Corato, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza (MB), IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/107 (2006.01); H01L 27/144 (2006.01); H01L 31/0232 (2014.01);
U.S. Cl.
CPC ...
H01L 31/107 (2013.01); H01L 27/1443 (2013.01); H01L 27/1446 (2013.01); H01L 31/02327 (2013.01);
Abstract

An avalanche photodiode includes a cathode region and an anode region. A lateral insulating region including a barrier region and an insulating region surrounds the anode region. The cathode region forms a planar optical guide within a core of the cathode region, the guide being configured to guide photons generated during avalanche. The barrier region has a thickness extending through the planar optical guide to surround the core and prevent propagation of the photons beyond the barrier region. The core forms an electrical-confinement region for minority carriers generated within the core.


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