The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Jan. 15, 2008
Applicant:
Trudy Benjamin, Portland, OR (US);
Inventor:
Trudy Benjamin, Portland, OR (US);
Assignee:
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); H01L 29/788 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7885 (2013.01); G11C 16/0433 (2013.01); H01L 29/42324 (2013.01);
Abstract
An EPROM cell includes a semiconductor substrate, having source and drain regions, a floating gate, including a semiconductive polysilicon layer electrically interconnected with a first metal layer, and a control gate, including a second metal layer. The floating gate is disposed adjacent to the source and drain regions and separated from the semiconductor substrate by a first dielectric layer, and the second metal layer of the control gate is capacitively coupled to the first metal layer with a second dielectric layer therebetween.