The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Sep. 30, 2016
Zongquan Gu, Chalfont, PA (US);
Mohammad Anwarul Islam, Warners, NY (US);
Jonathan Eli Spanier, Bala Cynwyd, PA (US);
Zongquan Gu, Chalfont, PA (US);
Mohammad Anwarul Islam, Warners, NY (US);
Jonathan Eli Spanier, Bala Cynwyd, PA (US);
DREXEL UNIVERSITY, Philadelphia, PA (US);
Abstract
Coupling of switchable ferroelectric polarization with the carrier transport in an adjacent semiconductor enables a robust, non-volatile manipulation of the conductance in a host of low-dimensional systems, including the two-dimensional electron liquid that forms at the LaAlO—SrTiOinterface. However, the strength of the gate-channel coupling is relatively weak, limited in part by the electrostatic potential difference across a ferroelectric gate. Compositionally grading of PbZrTiOferroelectric gates enables a more than twenty-five-fold increase in the LAO/STO channel conductance on/off ratios. Incorporation of polarization gradients in ferroelectric gates can enable significantly enhanced performance of ferroelectric non-volatile memories.