Semiconductor device having first and second gate electrodes

Abstract

In mesa regions between adjacent trenches disposed in an n-type drift layer and in which a first gate electrode is disposed via a first gate insulating film, a p-type base region and a floating p-type region of which a surface is partially covered by a second gate electrode via a second gate insulating film are disposed. An emitter electrode contacts the p-type base region and an n-type emitter region, and is electrically isolated from first and second gate electrodes and the floating p-type region by an interlayer insulating film covering the first and second gate electrodes and a portion of the floating p-type region not covered by the second gate electrode. Thus, turn-on dV/dt controllability by the gate resistance Rg may be improved.