The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Jan. 12, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Myeong-Dong Lee, Seoul, KR;
Hye-Young Kang, Anyang-si, KR;
Young-Sin Kim, Hwaseong-si, KR;
Yong-Kwan Kim, Yongin-si, KR;
Byoung-Wook Jang, Seoul, KR;
Augustin Jinwoo Hong, Seoul, KR;
Dong-Sik Kong, Hwaseong-si, KR;
Chang-Hyun Cho, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
A semiconductor device may include a linear gate trench that crosses an active region of a substrate of the semiconductor device. The active region may include a plurality of gate areas at a bottom of the gate trench and junction areas at a surface of the substrate in a central portion and opposite end portions of the active region. A conductive line may be in a lower portion of the gate trench. The conductive line may include a gate line and a capping layer that at least partially isolates the gate line from an upper surface of the conductive line. A sealing line may be in an upper portion of the gate trench. The sealing line may cover the conductive line and a surface of the sealing line may be coplanar with the junction areas.