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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9899474 B1

PDFFull Text
Date of Patent:
Feb. 20, 2018

Filed:

Jun. 08, 2017

Nanotube semiconductor devices

Applicant:

Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);

Inventors:

Hamza Yilmaz, Saratoga, CA (US);

Xiaobin Wang, San Jose, CA (US);

Anup Bhalla, Santa Clara, CA (US);

John Chen, Palo Alto, CA (US);

Hong Chang, Cupertino, CA (US);

Assignee:

Alpha and Omega Semiconductor, Inc., Sunnyvale, CA (US);

Attorney:

Innovation Counsel LLP

Primary Examiner:

David S Blum

Int. Cl.
CPC ...
H01L 27/095 (2006.01); H01L 29/47 (2006.01); H01L 29/812 (2006.01); H01L 31/07 (2012.01); H01L 29/74 (2006.01); H01L 31/111 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01); H01L 21/265 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0886 (2013.01); H01L 21/26586 (2013.01); H01L 27/0623 (2013.01); H01L 27/0629 (2013.01); H01L 27/0664 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/0638 (2013.01); H01L 29/0676 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/404 (2013.01); H01L 29/66348 (2013.01); H01L 29/66734 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01); H01L 29/8613 (2013.01); H01L 29/872 (2013.01);
Abstract

Semiconductor devices includes a thin epitaxial layer (nanotube) formed on sidewalls of mesas formed in a semiconductor layer. In one embodiment, a semiconductor device includes a first semiconductor layer, a second semiconductor layer formed thereon and of the opposite conductivity type, and a first epitaxial layer formed on mesas of the second semiconductor layer. An electric field along a length of the first epitaxial layer is uniformly distributed.

Find Patent Forward Citations

Yilmaz, Hamza. (2018). Nanotube semiconductor devices (U.S. Patent No. 9899474). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9899474

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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