The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Sep. 15, 2015
Applicant:
The Regents of the University of California, Oakland, CA (US);
Inventors:
Dmitri Strukov, Goleta, CA (US);
Mirko Prezioso, Goleta, CA (US);
Farnood Merrik-Bayat, Goleta, CA (US);
Brian Hoskins, Goleta, CA (US);
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2463 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1246 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/1625 (2013.01);
Abstract
There are disclosed memristors and memristor fabrication methods. A memristor may include a stack of four functional elements including, in sequence, a first electrode, a barrier layer, an oxygen-deficient switching layer, and a second electrode.
Strukov, Dmitri. (2018). Memristors and method for fabricating memristors (U.S. Patent No. 9899450). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9899450
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile