The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Jan. 21, 2016
Applicant:
Samsung Display Co., Ltd., Yongin-si, Gyeonggi-do, KR;
Inventors:
Assignee:
SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/136 (2006.01); H01L 27/12 (2006.01); G02F 1/1368 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); G02F 1/1368 (2013.01); G02F 1/136204 (2013.01); G02F 1/136227 (2013.01); G02F 1/136286 (2013.01); H01L 27/124 (2013.01); G02F 2001/13629 (2013.01);
Abstract
A thin film transistor substrate includes a base substrate, a first metallic layer including a gate electrode of a thin film transistor and an island electrode spaced apart from the gate electrode on the base substrate, a semiconductor layer of which a portion thereof overlaps the gate electrode of the first metallic layer, and a second metallic layer including a source electrode and a drain electrode of the thin film transistor which are spaced apart from each other on the portion of the semiconductor layer. The source electrode of the thin film transistor overlaps the island electrode.