The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
May. 29, 2014
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Shunpei Yamazaki, Setagaya, JP;
Hiroyuki Miyake, Atsugi, JP;
Seiko Inoue, Isehara, JP;
Shinpei Matsuda, Atsugi, JP;
Daisuke Matsubayashi, Atsugi, JP;
Masahiko Hayakawa, Tochigi, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
In a pixel including a selection transistor, a driver transistor, and a light-emitting element, as the driver transistor, a transistor is used in which a channel is formed in an oxide semiconductor film and its channel length is 0.5 μm or greater and 4.5 μm or less. The driver transistor includes a first gate electrode over an oxide semiconductor film and a second gate electrode below the oxide semiconductor film. The first gate electrode and the second gate electrode are electrically connected to each other and overlap with the oxide semiconductor film. Furthermore, in the selection transistor of a pixel, which does not need to have field-effect mobility as high as that of the driver transistor, a channel length is made longer than at least the channel length of the driver transistor.