The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Jun. 22, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A non-volatile memory device having a vertical structure includes: a first interlayer insulating layer on a substrate; a first gate electrode disposed on the first interlayer insulating layer; second interlayer insulating layers and second gate electrodes alternately stacked on the first gate electrode; an opening portion penetrating the first gate electrode, the second interlayer insulating layers, and the second gate electrodes and exposing the first interlayer insulating layer; a gate dielectric layer covering side walls and a bottom surface of the opening portion; and a channel region formed on the gate dielectric layer, and penetrating a bottom surface of the gate dielectric layer and the first interlayer insulating layer and thus electrically connected to the substrate, wherein a separation distance between side walls of the gate dielectric layer in a region which contacts the first gate electrode is greater than that in a region which contacts any one of the second gate electrodes.