The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2018

Filed:

Apr. 14, 2017
Applicants:

Kwangsoo Seol, Yongin-si, KR;

Sukpil Kim, Yongin-si, KR;

Yoondong Park, Osan-si, KR;

Inventors:

Kwangsoo Seol, Yongin-si, KR;

Sukpil Kim, Yongin-si, KR;

Yoondong Park, Osan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11556 (2017.01); H01L 27/11565 (2017.01); H01L 27/11524 (2017.01); H01L 27/11519 (2017.01); H01L 27/1157 (2017.01); H01L 27/11582 (2017.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11565 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 27/1157 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract

A non-volatile memory device can include a plurality of immediately adjacent offset vertical NAND channels that are electrically coupled to a single upper select gate line or to a single lower select gate line of the non-volatile memory device.


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