The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Jan. 20, 2016
Applicants:
Sung-min Hwang, Seoul, KR;
Jee-yong Kim, Hwaseong-Si, KR;
Dae-seok Byeon, Seongnam-si, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 27/11578 (2017.01); H01L 27/11575 (2017.01); H01L 27/11573 (2017.01); H01L 27/11565 (2017.01); H01L 27/1157 (2017.01); H01L 27/11563 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 27/115 (2013.01); H01L 27/1157 (2013.01); H01L 27/11563 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01); H01L 27/11575 (2013.01); H01L 27/11578 (2013.01); H01L 27/11582 (2013.01);
Abstract
A vertical memory device includes a plurality of gate electrodes at a plurality of levels, respectively, spaced apart from each other in a vertical direction substantially perpendicular to a top surface of a substrate, a channel extending in the vertical direction on the substrate and penetrating through the gate electrodes, and a plurality of contact plugs extending in the vertical direction and contacting the gate electrodes, respectively. At least one second contact plug is formed on a first gate electrode among the plurality of gate electrodes, and extends in the vertical direction.