The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2018

Filed:

Jul. 29, 2016
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Dow Corning Corporation, Midland, MI (US);

Inventors:

JunHyun Cho, Hwaseong-s, KR;

Michael David Telgenhoff, Midland, MI (US);

Xiaobing Zhou, Midland, MI (US);

Kyunghye Jung, Nam-gu, KR;

Younjoung Cho, Hwaseong-si, KR;

Assignees:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

DOW CORNING CORPORATION, Midland, MI (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 27/108 (2006.01); H01L 21/02 (2006.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 27/10855 (2013.01); H01L 21/0217 (2013.01); H01L 21/0262 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02488 (2013.01); H01L 21/02532 (2013.01); H01L 27/10814 (2013.01); H01L 21/02595 (2013.01); H01L 27/108 (2013.01); H01L 27/11556 (2013.01);
Abstract

The inventive concepts provide silicon precursors, methods of forming a layer using the same, and methods of fabricating a semiconductor device using the same. The silicon precursor includes a silane group including two or more silicon atoms. The silicon precursor has a high and uniform adsorption property on surfaces of layers (e.g., a silicon layer, an oxide layer, and a nitride layer) that are mainly used when semiconductor devices are fabricated.


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