The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Jun. 26, 2017
Globalfoundries Inc., Grand Cayman, KY;
Bichoy Bahr, Richardson, TX (US);
Zoran Krivokapic, Santa Clara, CA (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Circuit structures including a FinFET resonant body transistor are disclosed. One circuit structure includes: a plurality of fins over a substrate and a plurality of gate structures over the plurality of fins, the plurality of gate structures comprising at least one voltage sensing gate, and at least two of the plurality of fins comprising multiple pn-junctions disposed on opposing sides of the at least one voltage sensing gate, the multiple pn-junctions being fabricated to operate as driving units; at least one phononic crystal, wherein the at least one phononic crystal is arranged to confine vibrational energy arising from electrically induced mechanical stresses in the fins comprising driving units; and, wherein the electrically induced mechanical stresses modulate carrier mobility in the at least one voltage sensing gate to produce a current extractable by the circuit structure.