The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Feb. 09, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Andreas Kurz, Dresden, DE;
Andrei Sidelnicov, Dresden, DE;
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/525 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 27/12 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5256 (2013.01); H01L 27/1203 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/7838 (2013.01);
Abstract
A semiconductor device with a semiconductor-on-insulator (SOI) structure is provided including an insulating layer and a semiconductor layer formed on the insulating layer and a fuse. The fuse includes a first at least partially silicided raised semiconductor region with a first silicided portion and, adjacent to the first at least partially silicided raised semiconductor region, a second at least partially silicided raised semiconductor region with a second silicided portion. The second silicided portion is formed in direct physical contact with the first silicided portion.