The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Aug. 11, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Poren Tang, Hwaseong-si, KR;
Sunjung Steve Kim, Suwon-si, KR;
Moon Seung Yang, Hwaseong-si, KR;
Seung Hun Lee, Suwon-si, KR;
Hyun Jung Lee, Suwon-si, KR;
Geun Hee Jeong, Hwaseong-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/20 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 27/092 (2006.01); H01L 21/8258 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823892 (2013.01); H01L 21/0254 (2013.01); H01L 21/02499 (2013.01); H01L 21/02532 (2013.01); H01L 21/02546 (2013.01); H01L 21/308 (2013.01); H01L 21/30604 (2013.01); H01L 21/30612 (2013.01); H01L 21/823807 (2013.01); H01L 27/092 (2013.01); H01L 29/0653 (2013.01); H01L 29/1083 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 29/20 (2013.01); H01L 29/2003 (2013.01); H01L 21/8258 (2013.01);
Abstract
Methods of fabricating semiconductor device are provided including forming first and second material layers for a first transistor using epitaxial growth processes. A recess region is formed by partially etching the first and second material layers. Third and fourth material layers for a second transistor are formed using epitaxial growth processes.