The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Dec. 21, 2015
Industrial Technology Research Institute, Hsin-Chu, TW;
Kuan-Wei Chu, Hsinchu County, TW;
Ming-Jinn Tsai, Hsinchu, TW;
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, Hsin-Chu, TW;
Abstract
A trench structure on a SiC substrate and method for fabricating thereof is provided. The fabricating method includes: providing a SiC substrate; forming a protection layer on the SiC substrate; forming an resisting layer on the protection layer; patterning the resisting layer and the protection layer to form an opening; patterning the SiC substrate by using the patterned resisting layer as a hard mask to form a trench; removing the patterned resisting layer; performing a high-temperature annealing process to form a rounded bottom of the trench; and removing the protection layer.