The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Feb. 04, 2015
Applicant:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Inventors:
Assignee:
HITACHI KOKUSAI ELECTRIC, INC., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); C23C 16/30 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/30 (2013.01); C23C 16/4412 (2013.01); C23C 16/455 (2013.01); C23C 16/45531 (2013.01); C23C 16/45546 (2013.01); C23C 16/52 (2013.01); H01L 21/0214 (2013.01); H01L 21/02104 (2013.01); H01L 21/02126 (2013.01); H01L 21/02167 (2013.01); H01L 21/02205 (2013.01); H01L 21/02211 (2013.01); H01L 21/6715 (2013.01); H01L 21/67109 (2013.01);
Abstract
A method of manufacturing a semiconductor device, includes: forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a raw material gas to a substrate in a process chamber, exhausting the raw material gas remaining in the process chamber through an exhaust line, supplying an amine-based gas; and exhausting the amine-based gas through the exhaust line with the supply of the amine-based gas stopped. A degree of valve opening of an exhaust valve disposed in the exhaust line is changed in multiple steps in the process of exhausting the amine-based gas.