The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Aug. 02, 2016
The United States of America, As Represented BY the Secretary of Commerce, Washington, DC (US);
Norman A. Sanford, Boulder, CO (US);
Ann Chiaramonti Debay, Louisville, CO (US);
Brian P. Gorman, Golden, CO (US);
David R. Diercks, Littleton, CO (US);
THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE, Washington, DC (US);
COLORADO SCHOOL OF MINES, Golden, CO (US);
Abstract
A hybrid extreme ultraviolet (EUV) imaging spectrometer includes: a radiation source to: produce EUV radiation; subject a sample to the EUV radiation; photoionize a plurality of atoms of the sample; and form photoions from the atoms subject to photoionization by the EUV radiation, the photoions being desorbed from the sample in response to the sample being subjected to the EUV radiation; an ion detector to detect the photoions: as a function of a time-of-arrival of the photoions at the ion detector after the sample is subjected to the EUV radiation; or as a function of a position of the photoions at the ion detector; an electron source to: produce a plurality of primary electrons; subject the sample to the primary electrons; and form scattered electrons from the sample in response to the sample being subjected to the primary electrons; and an electron detector to detect the scattered electrons: as a function of a time-of-arrival of the scattered electrons at the electron detector after the sample is subjected to the EUV radiation or the primary electrons; or as a function of a position of the scattered electrons at the electron detector.