The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Jun. 06, 2014
Applicant:
University of Houston System, Houston, TX (US);
Inventors:
Assignee:
UNIVERSITY OF HOUSTON SYSTEM, Houston, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01B 5/00 (2006.01); H01B 1/02 (2006.01); H01B 13/00 (2006.01); A61N 1/04 (2006.01); B82Y 40/00 (2011.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
H01B 1/02 (2013.01); A61N 1/0472 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); G06F 2203/04112 (2013.01); Y10T 428/12424 (2015.01); Y10T 428/24331 (2015.01);
Abstract
A transparent flexible nanomesh having at least one conductive element and sheet resistance less than 300Ω/□ when stretched to a strain of 200% in at least one direction. The nanomesh is formed by depositing a sacrificial film, depositing, etching, and oxidizing a first metal layer on the film, etching the sacrificial film, depositing a second metal layer, and removing the first metal layer to form a nanomesh on the substrate.