The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Nov. 27, 2015
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 29/04 (2006.01); G11C 16/12 (2006.01); G11C 29/02 (2006.01); G11C 29/12 (2006.01); G11C 29/50 (2006.01); G11C 16/28 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 29/025 (2013.01); G11C 29/12005 (2013.01); G11C 29/50004 (2013.01); G11C 16/28 (2013.01); G11C 16/349 (2013.01); G11C 16/3459 (2013.01); G11C 2029/1202 (2013.01);
Abstract
A method of operating a semiconductor memory device includes applying a program pulse at least once to each of a plurality of pages; performing a pre-read operation on a reference page among the plurality of pages through an initial test voltage; repeating the pre-read operation by controlling the initial test voltage until a result of the pre-read operation is a pass; setting the initial test voltage of when the result of the pre-read operation is the pass as a reference test voltage; and detecting a defective page among the plurality of pages by performing read operations on the plurality of pages through the reference test voltage.