The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2018

Filed:

Dec. 29, 2016
Applicant:

Aucmos Technologies Usa, Inc., Santa Clara, CA (US);

Inventor:

Tianhong Yan, Saratoga, CA (US);

Assignee:

AUCMOS TECHNOLOGIES USA, INC., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); G11C 14/00 (2006.01);
U.S. Cl.
CPC ...
G11C 14/0072 (2013.01); G11C 11/22 (2013.01); G11C 11/221 (2013.01);
Abstract

A FeSRAM cell includes (a) first and second inverters between a power supply voltage and a ground reference cross-coupled to each other, the first and second cross-coupled inverters providing first and second data terminals; (b) first and second select transistors respectively coupled to the first and second data terminals to control access to the first second data terminals; and (c) first and second ferroelectric capacitors coupled between a first plate line and respectively the first and second data terminals, the first plate line receiving a negative programming voltage having a magnitude greater than the power supply voltage to allow programming one of the first and second ferroelectric capacitors into a first non-volatile programmed state.


Find Patent Forward Citations

Loading…