The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Aug. 24, 2016
Applicant:
SK Hynix Inc., Icheon-Si, KR;
Inventor:
Tae-Young Lee, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G06F 13/16 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); G11C 11/16 (2006.01); G06F 12/0802 (2016.01); G06F 3/06 (2006.01); G06F 13/40 (2006.01);
U.S. Cl.
CPC ...
G06F 13/1668 (2013.01); G06F 3/0611 (2013.01); G06F 3/0647 (2013.01); G06F 3/0656 (2013.01); G06F 3/0659 (2013.01); G06F 3/0685 (2013.01); G06F 12/0802 (2013.01); G06F 13/4068 (2013.01); G11C 11/161 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract
An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a pinned magnetization direction; and a tunnel barrier layer interposed between the pinned layer and the free layer, wherein the free layer may include a first magnetic layer; a second magnetic layer formed over the first magnetic layer; and a Zirconium (Zr)-containing material layer interposed between the first magnetic layer and the second magnetic layer.