The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2018

Filed:

Apr. 07, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Zhengyu Yang, Boston, MA (US);

Sina Hassani, Santa Cruz, CA (US);

Manu Awasthi, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 3/06 (2006.01); G06F 12/02 (2006.01);
U.S. Cl.
CPC ...
G06F 3/061 (2013.01); G06F 3/064 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G06F 12/0246 (2013.01); G06F 2212/1016 (2013.01); G06F 2212/214 (2013.01); G06F 2212/7201 (2013.01);
Abstract

A method for providing a memory translation layer includes: receiving write request streams from a host computer; selectively storing each write request stream into a sequential zone, a K-associative zone, and a random zone of log blocks of a nonvolatile memory based on the characteristics. A first group of the write request streams that are sequential and start from a header page of a log block are stored in the sequential zone. A second group of the write request streams that are sequential but do not start from a header page of a log block are stored in the K-associative zone. A third group of the write request streams that are random are stored in the random zone.


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