The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2018

Filed:

Feb. 02, 2016
Applicant:

Century Technology (Shenzhen) Corporation Limited, Shenzhen, CN;

Inventors:

Ming-Tsung Wang, New Taipei, TW;

Chih-Chung Liu, New Taipei, TW;

Yi-Hsiu Cheng, New Taipei, TW;

Jian-Xin Liu, Shenzhen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1362 (2006.01); H01L 27/12 (2006.01); G02F 1/1343 (2006.01);
U.S. Cl.
CPC ...
G02F 1/136213 (2013.01); H01L 27/124 (2013.01); H01L 27/1255 (2013.01); G02F 2001/134318 (2013.01);
Abstract

A thin film transistor array substrate includes a base, a first metal layer having a gate electrode and a first insulating layer covering the base and the first metal layer. A semiconductor layer is formed on the first insulating layer facing but insulated from the gate electrode. The first insulating layer also supports a second metal layer having a source electrode and a drain electrode. A pixel electrode layer is electrically coupled to the source electrode or the drain electrode. A common electrode layer is insulated from the pixel electrode and is configured to receive a common voltage. A transparent conductive layer is formed on the base and is insulated from the pixel electrode. The semiconductor layer, electrically coupled to the source electrode and the drain electrode, is located between the source electrode and the drain electrode.


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