The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2018

Filed:

Dec. 23, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Elaine Cyr, Granby, CA;

Dominique L. Demers, Waterloo, CA;

Paul F. Fortier, Richelieu, CA;

Alexander Janta-Polczynski, Shefford, CA;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B 5/18 (2006.01); G01B 21/16 (2006.01); H01L 23/00 (2006.01); G01B 11/06 (2006.01); G01B 11/14 (2006.01);
U.S. Cl.
CPC ...
G01B 21/16 (2013.01); G01B 11/0608 (2013.01); G01B 11/14 (2013.01); H01L 24/17 (2013.01); G01B 2210/56 (2013.01); H01L 2924/384 (2013.01);
Abstract

Systems and methods are provided for obtaining measurements of an integrated circuit chip and a connected carrier to obtain the measurements of the interconnect heights. More specifically, a method is provided that includes defining a top best fit reference plane and a bottom best fit reference plane, and adjusting the top best fit reference and the bottom best fit reference to be superposed to one another. The method further includes calculating first distances between each height measurement for a first set of points and the adjusted top best fit reference plane, and calculating second distances between each height measurement for a second set of points and the adjusted bottom best fit reference plane. The method further includes calculating height values of a gap or interconnect between the first substrate and the second substrate by subtracting the thickness of the first substrate and the second distances from the first distances.


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