The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2018

Filed:

Feb. 09, 2015
Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;

Inventors:

Tsubasa Honke, Itami, JP;

Kyoko Okita, Itami, JP;

Assignee:

SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka-shi, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 3/00 (2006.01); C30B 25/18 (2006.01); C30B 25/20 (2006.01); C30B 29/36 (2006.01); H01L 21/02 (2006.01); B24B 37/04 (2012.01); C23C 16/32 (2006.01);
U.S. Cl.
CPC ...
C30B 25/186 (2013.01); B24B 37/042 (2013.01); C23C 16/325 (2013.01); C30B 25/20 (2013.01); C30B 29/36 (2013.01); H01L 21/0243 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02529 (2013.01); H01L 21/02587 (2013.01); H01L 21/02658 (2013.01);
Abstract

A silicon carbide single-crystal substrate includes a first main surface and a second main surface opposite to the first main surface. The first main surface has a maximum diameter of not less than 100 mm. The first main surface includes a first central region excluding a region within 3 mm from an outer circumference of the first main surface. When the first central region is divided into first square regions each having a side of 250 μm, each of the first square regions has an arithmetic average roughness (Sa) of less than 0.2 nm, and an oxygen concentration in each of the first square regions is not less than 5 atom % and less than 20 atom %.


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