The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2018

Filed:

May. 28, 2014
Applicant:

Agc Glass Europe, Louvain-la-Neuve, BE;

Inventors:

Stijn Mahieu, Lovendegem, BE;

Anne-Christine Baudouin, Louvain-la-Neuve, BE;

Marc Hauptmann, Kessel-Lo, BE;

Jean-Michel Depauw, Brussels, BE;

Assignee:

AGC GLASS EUROPE, Louvain-la-Nueve, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03C 17/36 (2006.01); G02B 1/14 (2015.01); G02B 5/20 (2006.01); G02B 5/26 (2006.01);
U.S. Cl.
CPC ...
C03C 17/366 (2013.01); C03C 17/3618 (2013.01); C03C 17/3626 (2013.01); C03C 17/3639 (2013.01); C03C 17/3644 (2013.01); C03C 17/3681 (2013.01); G02B 1/14 (2015.01); G02B 5/208 (2013.01); G02B 5/26 (2013.01); C03C 2217/70 (2013.01); C03C 2218/156 (2013.01);
Abstract

The invention relates to low-emissivity and anti-solar glazing systems that change only very little in properties when they are subjected to a heat treatment. They comprise a stack of thin layers comprising an alternating arrangement of n infrared radiation reflecting functional layers and n+1 dielectric coatings, and a barrier layer directly superposed on the last functional layer furthest away from the substrate, characterized in that: (i) the first dielectric coating closest to the substrate comprises a layer made from an oxide, in direct contact with the substrate, (ii) the internal dielectric coating or coatings surrounded by two functional layers comprise a layer made from a silicon nitride or a silicon oxide with a thickness greater than 5 nm surrounded on both sides by layers made from an oxide other than silicon oxide with thicknesses greater than 5 nm, (iii) the barrier layer is based on zinc oxide or consists of an indium oxide possibly doped with tin, and (iv) the last dielectric coating furthest away from the substrate comprises, in order starting from the substrate: a layer made from an oxide other than silicon oxide with a thickness greater than 3 nm and a layer made from a silicon nitride or a silicon oxide with a thickness greater than 10 nm.


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