The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2018

Filed:

Jan. 26, 2017
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Shunpei Yamazaki, Tokyo, JP;

Teppei Oguni, Kanagawa, JP;

Kiyofumi Ogino, Kanagawa, JP;

Hisao Ikeda, Kanagawa, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H05K 1/09 (2006.01); G06F 3/044 (2006.01); H01B 1/04 (2006.01); H05K 3/06 (2006.01); H01L 27/32 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
H05K 1/09 (2013.01); G06F 3/044 (2013.01); H01B 1/04 (2013.01); H05K 3/06 (2013.01); G06F 2203/04103 (2013.01); H01L 27/323 (2013.01); H01L 27/3244 (2013.01); H01L 51/5246 (2013.01); H01L 2251/5307 (2013.01); H01L 2251/5315 (2013.01); H05K 2201/0323 (2013.01); H05K 2201/10151 (2013.01);
Abstract

A novel element is provided. A novel film formation method is provided. A novel element manufacturing method is provided. Furthermore, a film including graphene is formed at low cost and high yield. The element includes a first electrode and a second electrode located apart from the first electrode. The first electrode and the second electrode include graphene. The film including graphene is formed through a first step of forming a film including graphene oxide over a substrate, a second step of immersing the film including graphene oxide in an acidic solution, and a third step of reducing graphene oxide included in the film including graphene oxide. Furthermore, before graphene oxide included in the film including graphene oxide is reduced, the film including graphene oxide is selectively removed by a photolithography technique.


Find Patent Forward Citations

Yamazaki, Shunpei. (2018). Element and formation method of film (U.S. Patent No. 9894762). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9894762

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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