The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2018

Filed:

Oct. 07, 2015
Applicants:

Young Gu Jin, Osan-si, KR;

Min Ho Kim, Seongnam-si, KR;

Tae Chan Kim, Yongin-si, KR;

Dong Ki Min, Seoul, KR;

Sang Chul Sul, Suwon-si, KR;

Tae Seok OH, Seoul, KR;

Kwang Hyun Lee, Seongnam-si, KR;

Tae Yon Lee, Seoul, KR;

Ju Hwan Jung, Seoul, KR;

Inventors:

Young Gu Jin, Osan-si, KR;

Min Ho Kim, Seongnam-si, KR;

Tae Chan Kim, Yongin-si, KR;

Dong Ki Min, Seoul, KR;

Sang Chul Sul, Suwon-si, KR;

Tae Seok Oh, Seoul, KR;

Kwang Hyun Lee, Seongnam-si, KR;

Tae Yon Lee, Seoul, KR;

Ju Hwan Jung, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H04N 5/363 (2011.01); H01L 27/146 (2006.01); H04N 5/3745 (2011.01); H04N 5/374 (2011.01); H04N 5/378 (2011.01);
U.S. Cl.
CPC ...
H04N 5/363 (2013.01); H01L 27/1461 (2013.01); H01L 27/14612 (2013.01); H01L 27/14614 (2013.01); H01L 27/14643 (2013.01); H04N 5/374 (2013.01); H04N 5/378 (2013.01); H04N 5/3742 (2013.01); H04N 5/3745 (2013.01);
Abstract

ACMOS image sensor includes a pixel array having a plurality of pixels. Each of the plurality of pixels includes: a photogate structure configured to be controlled based on a first gate voltage; and a sensing transistor including a charge pocket region formed in a substrate region, the sensing transistor being configured to be controlled based on a second gate voltage. Based on the first gate voltage, the photogate structure is configured to integrate charges generated in response to light incident on the substrate region. The sensing transistor is configured to adjust at least one of a threshold voltage of the sensing transistor and a current flow in the sensing transistor according to charges transferred from the photogate structure to the charge pocket region based on a difference between the first gate voltage and the second gate voltage.


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