The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
May. 06, 2016
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Roman Stuler, Karolinka, CZ;
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Abstract
A power conversion circuit includes a high-side MOSFET and a low-side MOSFET. A conduction terminal of the high-side MOSFET is coupled to a conduction terminal of the low-side MOSFET at a half-bridge (HB) circuit node. The high-side MOSFET is switched off. Voltage potential transitions of the HB circuit node are counted while the high-side MOSFET and low-side MOSFET are off. Assertion of a control signal to the low-side MOSFET is postponed for two voltage potential transitions of the HB circuit node after the high-side MOSFET is switched off. The low-side MOSFET is switched off by de-asserting the control signal to the low-side MOSFET. Switching on the high-side MOSFET is postponed for two voltage potential transitions of the HB circuit node after switching off the low-side MOSFET.