The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
Aug. 12, 2014
Applicant:
Lg Innotek Co., Ltd., Seoul, KR;
Inventors:
Assignee:
LG INNOTEK CO., LTD., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/00 (2006.01); G05F 1/613 (2006.01); G05F 3/16 (2006.01); G05F 1/618 (2006.01); H01F 17/00 (2006.01); H02M 7/00 (2006.01); H02M 7/538 (2007.01); H02M 1/42 (2007.01); H02M 7/06 (2006.01); H02M 7/217 (2006.01); H02M 7/155 (2006.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H02M 1/4208 (2013.01); H02M 1/4225 (2013.01); H02M 7/06 (2013.01); H02M 7/155 (2013.01); H02M 7/217 (2013.01); H02M 2001/009 (2013.01); Y02B 70/126 (2013.01);
Abstract
According to one embodiment of the present invention, when a power supply device having first and second amplification units which share an energy storage element is used, it is possible to reduce voltage stress of a semiconductor device and to consistently maintain output voltage outputted to the first and second amplification units while individually adjusting the amplification rates of the first and second amplification units.