The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2018

Filed:

Nov. 27, 2014
Applicant:

Sharp Kabushiki Kaisha, Osaka-shi, JP;

Inventors:

Yuhki Kobayashi, Osaka, JP;

Katsuhiro Kikuchi, Osaka, JP;

Shinichi Kawato, Osaka, JP;

Takashi Ochi, Osaka, JP;

Satoshi Inoue, Osaka, JP;

Kazuki Matsunaga, Osaka, JP;

Eiichi Matsumoto, Mitsuke, JP;

Masahiro Ichihara, Mitsuke, JP;

Assignee:

SHARP KABUSHIKI KAISHA, Sakai, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/04 (2006.01); C23C 14/24 (2006.01); C23C 16/04 (2006.01); H01L 51/56 (2006.01); H01L 51/00 (2006.01); C23C 14/56 (2006.01); C23C 16/44 (2006.01); C23C 14/54 (2006.01); C23C 14/12 (2006.01); C23C 16/50 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0011 (2013.01); C23C 14/042 (2013.01); C23C 14/12 (2013.01); C23C 14/24 (2013.01); C23C 14/54 (2013.01); C23C 14/564 (2013.01); C23C 16/042 (2013.01); C23C 16/4412 (2013.01); C23C 16/50 (2013.01); H01L 51/001 (2013.01); H01L 51/0012 (2013.01); H01L 51/56 (2013.01); H01L 2227/323 (2013.01); H01L 2251/533 (2013.01);
Abstract

The present invention relates to a vapor deposition device for forming a film on a substrate, including: a vapor deposition chamber; a vapor deposition unit including a vapor deposition mask provided with an opening for pattern formation; and a transport mechanism that is configured to transfer at least one of the substrate and the vapor deposition unit relative to the other in a first direction perpendicular to the normal direction of the vapor deposition mask and that is configured to cause the substrate to rest temporarily at a resting position relative to the vapor deposition unit. The substrate includes a vapor-deposition-target region, and the region does not overlap the opening of the vapor deposition mask when the substrate is at the resting position. The vapor deposition chamber is provided with a first vent and a second vent.


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