The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
Sep. 16, 2014
Gwangju Institute of Science and Technology, Gwangju, KR;
Duk Jo Kong, Gwangju, KR;
Dong Seon Lee, Gwangju, KR;
Chang Mo Kang, Gwangju, KR;
Jun Youb Lee, Gwangju, KR;
GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY, Gwangju, KR;
Abstract
A light emitting diode and a manufacturing method therefore are provided. The light emitting diode includes at least: a first light emitting structure, formed on a substrate, in which a first n-GaN layer, a first active layer and a first p-GaN layer are sequentially layered; a first n-type electrode formed on one side of the upper part of the first n-GaN layer; a current diffusion layer, formed on the first light emitting structure, in which at least one hole is arranged; and a second light emitting structure in which a second p-GaN layer, which is formed in a region of a conductive layer in which at least one hole is arranged, and a second active layer and a second n-GaN layer, which are formed on the second p-GaN layer, are sequentially layered.